Light emitting device package and lighting system including the same

ABSTRACT

Provided are a light emitting device package and a lighting system including the light emitting device package. The light emitting device package includes a package body, at least one electrode on the package body, a light emitting device on the package body, a reflective structure around the light emitting device on the package body and a lens on the light emitting device and the electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims under 35 U.S.C. §119 to Korean PatentApplication No. 10-2011-0094802 (filed on Sep. 20, 2011), which ishereby incorporated by reference in its entirety.

BACKGROUND

Embodiments relate to a light emitting device package and a lightingsystem including the light emitting device package.

Light emitting devices (LEDs), which are semiconductor devices forconverting electrical energy into light energy, may emit light ofvarious wavelengths (colors), such as red, green, blue, and ultravioletrays, by controlling a composition of a semiconductor compound, andgenerate white light having high efficiency, by using a phosphor orcombining colors.

Light emitting devices are superior to typical light sources such asfluorescent lamps and incandescent lamps in power consumption, servicelife, response speed, safety, and environmental friendliness.Accordingly, light emitting devices are widely used in light emittingdiode backlights that replace cold cathode fluorescence lamps (CCFLs)constituting backlights of liquid crystal display (LCD) devices; whitelight emitting diode lighting devices that replace fluorescent lamps andincandescent lamps; vehicle headlamps; and traffic lights.

Typical light emitting device packages include a light emitting devicemounted on a package body and an electrode layer disposed on the packagebody and electrically connected to the light emitting device. A resinlayer including a phosphor is formed on the light emitting device, and amolding part having a certain lens shape is disposed on the resin layer.

When such a light emitting device package has a two dimensionalstructure in which a package body for mounting a light emitting devicehas no cavity, it may be difficult to control a vertical light emissiondistribution, which degrades light extraction efficiency.

SUMMARY

Embodiments provide a light emitting device package having improvedlight extraction efficiency, and a lighting system including the lightemitting device package.

In one embodiment, a light emitting device package includes: a packagebody; at least one electrode on the package body; a light emittingdevice on the package body; a reflective structure around the lightemitting device on the package body; and a lens on the light emittingdevice and the electrode.

Also, in another embodiment, a light emitting device package includes: apackage body; at least one electrode on the package body; a lightemitting device on the package body; a reflective structure surroundingthe light emitting device on the package body; a resin on the lightemitting device; and a lens on the resin, wherein the resin is disposedin an inside area of the reflective structure.

In another embodiment, a lighting system includes a light emittingmodule part including the light emitting device package.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a light emitting devicepackage according to a first embodiment.

FIG. 2 is a cross-sectional view illustrating a light emitting devicepackage according to a second embodiment.

FIG. 3 is a cross-sectional view illustrating a light emitting devicepackage according to a third embodiment.

FIG. 4 is a cross-sectional view illustrating a light emitting devicepackage according to a fourth embodiment.

FIG. 5 is a cross-sectional view illustrating a light emitting devicepackage according to a fifth embodiment.

FIG. 6 is a cross-sectional view illustrating a light emitting devicepackage according to a sixth embodiment.

FIG. 7 is a cross-sectional view illustrating a light emitting devicepackage according to a seventh embodiment.

FIG. 8 is a cross-sectional view illustrating a light emitting devicepackage according to an eighth embodiment.

FIG. 9 is a cross-sectional view illustrating a light emitting devicepackage according to a ninth embodiment.

FIGS. 10 to 14 are cross-sectional views illustrating a method offabricating a light emitting device package according to an embodiment.

FIG. 15 is a perspective view illustrating a lighting unit according toan embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the embodiments of the presentdisclosure, examples of which are illustrated in the accompanyingdrawings.

In the description of embodiments, it will be understood that when alayer (or film) is referred to as being ‘on/over’ another layer orsubstrate, it can be directly on another layer or substrate, orintervening layers may also be present. Further, it will be understoodthat when a layer is referred to as being ‘under’ another layer, it canbe directly under another layer, and one or more intervening layers mayalso be present. In addition, it will also be understood that when alayer is referred to as being ‘between’ two layers, it can be the onlylayer between the two layers, or one or more intervening, layers mayalso be present.

Embodiments

FIG. 1 is a cross-sectional view illustrating a light emitting devicepackage according to a first embodiment.

The light emitting device package may include: a package body 205; alight emitting device 230 on the package body 205; electrodes 211 and212, which are disposed on the package body 205, and are electricallyconnected to the light emitting device 230; a lens 250 on the lightemitting device 230 and a reflective structure 260 around the lightemitting device 230 on the package body 205.

The package body 205 may include a ceramic dielectric layer, but is notlimited thereto. For example, a ceramic insulation layer constitutingthe package body 205 may be formed of a nitride or oxide. For example,the package body 205 may comprise at least one of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, or AlN, but is not limitedthereto.

The light emitting device package may have improved vertical lightextraction efficiency, and constitutes a lighting system according tothe current embodiment.

To this end, the reflective structure 260 disposed around the lightemitting device 230 on the package body 205 may control a vertical lightemission distribution.

The reflective structure 260 may be disposed between the lens 250 andthe electrodes 211 and 212. For example, the reflective structure 260may be disposed on the electrodes 211 and 212 under the periphery of thelens 250, but is not limited thereto.

The lens 250 may be different in an index of refraction from thereflective structure 260 that may be disposed within the lens 250.

The lens 250 can cover the reflective structure. For example, the lens250 can cover an outside surface of the reflective structure 260, andthe reflective structure 260 can be surrounded by the lens 250. And, thereflective structure 260 cannot be exposed through the lens 250.

Also, the lens 250 can be directly disposed on the reflective structure260.

The reflective structure 260 may have a side surface having an angle ofinclination smaller than 90° from a horizontal line. For example, theangle of inclination of the side surface of the reflective structure 260may range from about 45° to about 90°, but is not limited thereto.

The reflective structure 260 may surround the light emitting device 230.For example, the reflective structure 260 may be provided in the form ofa dam or ring to surround the light emitting device 230, but is notlimited thereto.

The light emitting device 230 may be disposed in the reflectivestructure 260.

The reflective structure 260 may have a height greater than that of thelight emitting device 230.

For example, a top surface of the reflective structure 260 may be higherthan a top surface of the light emitting device 230, so that lightemitted from the light emitting device 230 can be reflected upwardly atan orientation angle of about 120°, thereby controlling a vertical lightemission distribution.

The reflective structure 260 may be formed of an insulating materialhaving reflectivity. For example, the reflective structure 260 mayinclude an oxide film comprising at least one of TiO₂ or SiO₂, but isnot limited thereto. The reflective structure 260 may be formed using amold, but is not limited thereto.

FIG. 2 is a cross-sectional view illustrating a light emitting devicepackage according to a second embodiment. According to the secondembodiment, a phosphor layer 241 may be disposed on the light emittingdevice 230.

FIG. 3 is a cross-sectional view illustrating a light emitting devicepackage according to a third embodiment.

According to the third embodiment, a resin 280 can be disposed on thelight emitting device 230. For example, the resin layer 280 may have adome shape through a dotting process.

FIG. 4 is a cross-sectional view illustrating a light emitting devicepackage according to a fourth embodiment. According to the fourthembodiment, a phosphor layer 243 can be formed on the light emittingdevice 230. The phosphor layer 243 can be formed by a conformal coatingprocess.

FIG. 5 is a cross-sectional view illustrating a light emitting devicepackage according to a fifth embodiment.

According to the fifth embodiment, a passivation 245 as a dielectriclayer can be formed on a side surface of the light emitting device 230to prevent an electric short.

The lens 250 may be formed of silicone in a dome shape, but is notlimited thereto.

FIG. 6 is a cross-sectional view illustrating a light emitting devicepackage according to a sixth embodiment.

The sixth embodiment may use the technical features of the aboveembodiments.

A reflective structure 262 according to the sixth embodiment may have aside surface having a curvature and facing the light emitting device230. Accordingly, the reflective structure 262 may vertically reflectlight. For example, the reflective structure 262 may have a certaincurvature to be convex or concave toward the light emitting device 230,but is not limited thereto. Referring to FIG. 6, the reflectivestructure 262 may have an inner surface having a curvature to beconcave, but is not limited thereto.

FIG. 7 is a cross-sectional view illustrating a light emitting devicepackage according to a seventh embodiment.

The seventh embodiment may use the technical features of the aboveembodiments.

A reflective structure 263 according to the seventh embodiment mayinclude a plurality of layers formed of different materials or the samematerial. In this case, neighboring ones of the layers may be differentin an index of refraction, but is not limited thereto.

For example, the reflective structure 263 may include a first barrier263 a on the package body 205, and a dielectric reflective structure 263b on the first barrier 263 a.

The first barrier 263 a may be a silicone barrier, but is not limitedthereto.

After the first barrier 263 a is formed, the dielectric reflectivestructure 263 b is formed to increase a contact area between thedielectric reflective structure 263 b and the first barrier 263 a,thereby increasing contact force of the dielectric reflective structure263 b.

In addition, when the dielectric reflective structure 263 b is formedafter the first barrier 263 a can be formed, the dielectric reflectivestructure 263 b can have an inclined inner surface near the lightemitting device 230, thereby improving vertical light extractionefficiency.

The first barrier 263 a may be formed through a silicon dispensingprocess, but the forming of the first barrier 263 a is not limitedthereto. For example, the first barrier 263 a may be formed by attachinga prefabricated silicone ring.

FIG. 8 is a cross-sectional view illustrating a light emitting devicepackage according to a eight embodiment.

The eight embodiment may use the technical features of the aboveembodiments.

A reflective structure 264 according to the current embodiment mayinclude a second barrier 264 a on the package body 205, and a dielectricreflective structure 264 b on the second barrier 264 a.

The second barrier 264 a may be a ceramic barrier, but is not limitedthereto. The second barrier 264 a may be formed by attaching aprefabricated ceramic ring, but the forming of the second barrier 264 ais not limited thereto.

After the second barrier 264 a is formed, the dielectric reflectivestructure 264 b is formed to increase a contact area between thedielectric reflective structure 264 b and the second barrier 264 a,thereby increasing contact force of the dielectric reflective structure264 b.

In addition, when the dielectric reflective structure 264 b is formedafter the second barrier 264 a is formed, the dielectric reflectivestructure 264 b has an inclined inner surface near the light emittingdevice 230, thereby improving vertical light extraction efficiency.

FIG. 9 is a cross-sectional view illustrating a light emitting devicepackage according to a ninth embodiment.

The ninth embodiment may use the technical features of the aboveembodiments.

Inner and outer portions of a dielectric reflective structure 264 caccording to the current embodiment may have different angle ofinclinations. For example, when the dielectric reflective structure 264c is formed after the second barrier 264 a is formed, the dielectricreflective structure 264 c has an inclined inner surface near the lightemitting device 230, and the inclined inner surface may have an angle ofinclination smaller than that of an outer inclined surface of thedielectric reflective structure 264 c, thereby improving lightextraction efficiency.

According to the ninth embodiment, a light emitting device package mayhave improved light extraction efficiency, and a lighting system mayinclude the light emitting device package.

Hereinafter, a method of fabricating a light emitting device packageaccording to an embodiment will be described with reference to FIGS. 10to 14

Referring to FIG. 10, the package body 205 can be prepared, and theelectrodes 211 and 212 are formed on the package body 205.

The package body 205 may include a ceramic dielectric layer. Forexample, the package body 205 may be formed of a low temperatureco-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC),which is obtained by co-firing ceramic dielectric layers (not shown).Accordingly, metal electrode patterns according to a design may beformed between the ceramic dielectric layers.

A ceramic insulation layer constituting the package body 205 may beformed of a nitride or oxide. For example, the package body 205 may beformed of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, orAlN, but is not limited thereto.

The electrodes 211 and 212 may include first and second electrodes (alsodenoted by 211 and 212) on the package body 205. The first electrode 211and the second electrode 212 are electrically separated from each otheras positive and negative electrodes in order to supply power to thelight emitting device 230. Other electrodes than the first electrode 211and the second electrode 212 may be provided according to a design ofthe light emitting device 230, but the present disclosure is not limitedthereto.

The first electrode 211 and the second electrode 212 may have amulti-layered structure. For example, the first electrode 211 and thesecond electrode 212 may be a Ti/Cu/Ni/Au layer formed by sequentiallystacking titanium (Ti), copper (Cu), nickel (Ni), and gold (Au).

That is, the lowermost layer of the first electrode 211 and the secondelectrode 212 is formed of a material efficiently adhered to the packagebody 205, such as titanium (Ti), chrome (Cr), and tantalum (Ta); theuppermost layer of the first electrode 211 and the second electrode 212is formed of a material having excellent electric conductivity, such asgold (Au) to which a wire is efficiently attached; and a diffusionbarrier layer formed of platinum (Pt), nickel (Ni), or copper (Cu) maybe disposed between the lowermost layer and the uppermost layer.However, the present disclosure is not limited thereto.

The first electrode 211 and the second electrode 212 are patterned andstacked together with the package body 205, and then, are fired togetherwith the package body 205. Accordingly, the first electrode 211 and thesecond electrode 212 may be disposed within the package body 205.

The first electrode 211 may include a first upper electrode 211 aexposed at the upper side of the package body 205, a first middleelectrode 211 b connecting to the first upper electrode 211 a andpassing through the package body 205, and a first lower electrode 211 cconnecting to the first middle electrode 211 b and disposed under thepackage body 205. Alternatively, the first middle electrode 211 b may beconnected to the first lower electrode 211 c along a side surface of thepackage body 205, without passing through the package body 205.

The second electrode 212 may include a second upper electrode 212 aexposed at the upper side of the package body 205, a second middleelectrode 212 b connecting to the second upper electrode 212 a andpassing through the package body 205 and a second lower electrode 212 cconnecting to the second middle electrode 212 b and disposed under thepackage body 205.

The first upper electrode 211 a exposed on the package body 205 mayfunction as a mounting pad on which the light emitting device 230 ismounted.

The second electrode 212 may be electrically connected to the topsurface of the light emitting device 230 through a wire 245.

A reflective layer (not shown) may be formed on the first and secondelectrodes 211 and 212 on the top surface of the package body 205.

Next, referring to FIG. 11 the reflective structure 260 is formed on thepackage body 205.

The reflective structure 260 may be disposed around the light emittingdevice 230 on the package body 205 to control a vertical light emissiondistribution.

The reflective structure 260 may be formed of an insulating materialhaving reflectivity. For example, the reflective structure 260 mayinclude an oxide film formed of TiO₂ or SiO₂, but is not limitedthereto. The reflective structure 260 may be formed using a mold, but isnot limited thereto.

The angle of inclination of a side surface of the reflective structure260 from a horizontal line may range from about 45° to about 90°, but isnot limited thereto.

The reflective structure 260 may surround the light emitting device 230.For example, the reflective structure 260 may be provided in the form ofa dam or ring to surround the light emitting device 230, but is notlimited thereto.

The top surface of the reflective structure 260 may be higher than thetop surface of the light emitting device 230, so that light emitted fromthe light emitting device 230 can be reflected upward at an orientationangle of about 120°, thereby controlling a vertical light emissiondistribution.

According to the sixth embodiment of FIG. 6, the side surface of thereflective structure 260 near the light emitting device 230 may have acurvature to vertically reflect light. For example, the reflectivestructure 260 may have a certain curvature to be concave toward thelight emitting device 230, but is not limited thereto.

In addition, according to the seventh embodiment of FIG. 7, thereflective structure 263 may include the first barrier 263 a on thepackage body 205, and the dielectric reflective structure 263 b on thefirst barrier 263 a. The first barrier 263 a may be a silicone barrier,but is not limited thereto.

In addition, according to the eight embodiment of FIG. 8, the reflectivestructure 264 may include the second barrier 264 a on the package body205, and the dielectric reflective structure 264 b on the second barrier264 a.

The second barrier 264 a may be a ceramic barrier, but is not limitedthereto. The second barrier 264 a may be formed by attaching aprefabricated ceramic ring, but the forming of the second barrier 264 ais not limited thereto.

Next, referring to FIG. 12, the light emitting device 230 may be mountedon the package body 205.

The light emitting device 230 may be mounted directly on a dielectriclayer of the package body 205, or be electrically connected to the firstelectrode 211 or the second electrode 212.

The light emitting device 230 may be mounted on and electricallyconnected to the first electrode 211, and be electrically connected tothe second electrode 212 through the wire 245. For example, an end ofthe wire 245 may be bonded to the second electrode 212, and the otherend thereof may be bonded to the light emitting device 230, but thepresent disclosure is not limited thereto.

The light emitting device 230 may be an ultraviolet light emitting diodehaving a wavelength ranging from about 245 nm to about 405 nm, a bluelight emitting diode having a wavelength of visible light, or a redlight emitting diode, but is not limited thereto.

The light emitting device 230 may be mounted using a wire bondingmethod, a die bonding method, or a flip bonding method, which may beselected according to the type of a chip and the position of anelectrode of the chip.

The light emitting device 230 may include a group III-V compoundsemiconductor such as AlInGaN, InGaN, GaN, GaAs, InGaP, AlInGaP, InP,and InGaAs.

The light emitting device 230 may be adhered to the first electrode 211through a conductive adhesive, and be electrically connected to thesecond electrode 212 through the wire 245. In this case, the lightemitting device 230 may be called a vertical light emitting device.

Referring to FIG. 13, the light emitting device 230 may include a secondelectrode layer 238, a second conductive type semiconductor layer 236,an active layer 234, and a first conductive type semiconductor layer232, but is not limited thereto.

The second electrode layer 238 may include an ohmic layer (not shown), areflective layer (not shown), a coupling layer (not shown), and aconductive substrate (not shown). The second electrode layer 238 mayinclude at least one of titanium (Ti), chrome (Cr), nickel (Ni),aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo),and a semiconductor substrate to which impurities are injected.

The first conductive type semiconductor layer 232 may be formed of asemiconductor compound. For example, the first conductive typesemiconductor layer 232 may be formed of a group III-V semiconductorcompound or a group II-VI semiconductor compound, and be doped with afirst conductive type dopant. When the first conductive typesemiconductor layer 232 is an n-type semiconductor layer, the firstconductive type dopant as an n-type dopant may include Si, Ge, Sn, Se,or Te, but is not limited thereto. The first conductive typesemiconductor layer 232 may include at least one of GaN, InN, AlN,InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP,InGaP, AlInGaP, and InP.

The active layer 234 may have at least one of a single quantum wellstructure or a multi quantum well (MQW) structure, a quantum wirestructure, and a quantum dot structure. Well layer/barrier layer of theactive layer 234 may have a pair structure with at least one ofInGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, andGaP(InGaP)/AlGaP, but are not limited thereto. The well layer may beformed of a material having a lower band gap than that of the barrierlayer.

The second conductive type semiconductor layer 236 may be formed of asemiconductor compound. For example, the second conductive typesemiconductor layer 236 may be formed of a group III-V semiconductorcompound or a group II-VI semiconductor compound, and be doped with asecond conductive type dopant. For example, the second conductive typesemiconductor layer 236 may include a semiconductor having acompositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, and0≦x+y≦1). When the second conductive type semiconductor layer 236 is aptype semiconductor layer, the second conductive type dopant may includeMg, Zn, Ca, Sr, or Ba as a P type dopant.

In the embodiment, the first conductive type semiconductor layer 232 maybe an n-type semiconductor layer, and the second conductive typesemiconductor layer 236 may be a p-type semiconductor layer, but thepresent disclosure is not limited thereto. A layer formed of asemiconductor having a pole opposite to that of a second conductive typesemiconductor, e.g., an n-type semiconductor layer (not shown) may beformed on the second conductive type semiconductor layer 236.Accordingly, a light emitting structure having one of an n-p junctionstructure, a p-n junction structure, an n-p-n junction structure, and ap-n-p junction structure may be formed.

Next, referring to FIG. 12, the phosphor layer 243 may be formed on thelight emitting device 230. Also, a resin layer 280 (See FIG. 3) can beformed on the light emitting device 230. For example, the resin layer280 may have a dome shape through a dotting process.

The second electrode 212 may be electrically connected to the lightemitting device 230 through a wire 290 (See FIG. 1).

The passivation 245 as a dielectric layer is formed on a side surface ofthe light emitting device 230 to prevent an electric short circuit.

Next, referring to FIG. 14, a lens 250 may be formed on the phosphorlayer 243.

The lens 250 may be formed of silicone in a dome shape, but is notlimited thereto. The lens 250 may have physical properties similar tothose of the phosphor layer 243, thereby minimizing thermal expansionstress due to thermal stress. For example, the lens 250 may be formed ofsilicone, but is not limited thereto.

According to the embodiment, a light emitting device package may haveimproved light extraction efficiency, and a lighting system may includethe light emitting device package.

The light emitting device package may be provided in plurality on asubstrate, and a light guide plate, a prism sheet, a spread sheet, and afluorescent sheet may be disposed as optical members in the path oflight emitted from the light emitting device package. The light emittingdevice package, the substrate, and the optical members may function as alighting system such as a backlight unit, a lighting unit, an indicatingdevice, a lamp, and a road lamp.

FIG. 15 is a perspective view illustrating a lighting unit 1100according to an embodiment.

However, the lighting unit 1100 illustrated in FIG. 15 is just anexample of a lighting system, and thus, the present disclosure is notlimited thereto.

The lighting unit 1100 may include a case body 1110, a light emittingmodule part 1130 disposed in the case body 1110, and a connectingterminal 1120 disposed in the case body 1110 to receive power from anexternal power source.

The case body 1110 may be formed of a material having excellent heatdissipation performance. For example, the case body 1110 may be formedof a metal or resin.

The light emitting module part 1130 may include a board 1132 and atleast one light emitting device package 200 mounted on the board 1132.

A circuit pattern may be printed on an insulation material to form theboard 1132. For example, the board 1132 may include a printed circuitboard (PCB), a metal core PCB, a flexible PCB, or a ceramic PCB.

Also, the board 1132 may be formed of a material that can efficientlyreflect light, or be coated with a colored material, e.g., a white orsilver-colored material by which light is efficiently reflected.

At least one light emitting device package 200 may be mounted on theboard 1132. Each light emitting device package 200 may include at leastone light emitting diode (LED) 240. The light emitting diode 240 mayinclude a colored light emitting diode that emits red, green, blue, orwhite light, and an ultraviolet (UV) light emitting diode that emits aUV ray.

The light emitting device package 200 may be exemplified as a lightemitting device package, but the present disclosure is not limitedthereto.

The light emitting module part 1130 may have various combinations of thelight emitting device packages 200 to obtain intended color andbrightness. For example, a combination of a white light emitting diode,a red light emitting diode, and a green light emitting diode may be usedto have a high color rendering index (CRI).

The connecting terminal 1120 may be electrically connected to the lightemitting module part 1130 to supply power thereto. The connectingterminal 1120 is screwed in the form of a socket into an external powersource, but is not limited thereto. For example, the connecting terminal1120 may be inserted in the form of a pin into an external power source,or be connected to an external power source through a wire.

According to the embodiment, a light emitting device package may haveimproved reliability, and a lighting system may include the lightemitting device package.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device package comprising: apackage body; at least one electrode on the package body; a lightemitting device on the package body; a reflective structure around thelight emitting device on the package body; and a lens on the lightemitting device, wherein the lens covers the reflective structure,wherein the electrode comprises: a upper electrode disposed on thepackage body; a middle electrode connecting to the upper electrode andpassing through inside the package body: and a lower electrodeconnecting to the middle electrode and disposed under the parking body,wherein the reflective structure is disposed on a part of the upperelectrode of the electrode in the lens.
 2. The light emitting devicepackage according to claim 1, wherein the lens is contact with the upperelectrode of the electrode wherein the reflective structure is contactwith the upper electrode of the electrode.
 3. The light emitting devicepackage according to claim 1, wherein the reflective structure surroundsthe light emitting device.
 4. The light emitting device packageaccording to claim 1, wherein a top surface of the reflective structureis higher than a top surface of the light emitting device from a topsurface of the package body.
 5. The light emitting device packageaccording to claim 1, wherein at least one portion of the reflectivestructure is disposed between the lens and the electrode.
 6. The lightemitting device package according to claim 1, wherein the reflectivestructure comprises a plurality of layers formed of different materialsor the same material.
 7. The light emitting device package according toclaim 1, wherein the lens and the reflective structure are different inan index of refraction.
 8. The light emitting device package accordingto claim 1, wherein the reflective structure has a cone type in a crosssection view.
 9. The light emitting device package according to claim 1,wherein the reflective structure has a side surface having an angle ofinclination smaller than 90° from a horizontal line.
 10. The lightemitting device package according to claim 1, wherein the reflectivestructure comprises an oxide film formed of at least one of TiO₂ andSiO₂.
 11. The light emitting device package according to claim 1,wherein the package body comprises a ceramic dielectric layer.
 12. Alight emitting device package comprising: a package body; at least oneelectrode on the package body; a light emitting device on the packagebody; a reflective structure around the light emitting device on thepackage body; and a lens on the light emitting device, wherein the lenscovers the reflective structure, and wherein the lens and the reflectivestructure are different in an index of refraction, wherein the electrodecomprises: a upper the package body; a middle electrode connecting tothe upper electrode and passing through inside the package body: and alower electrode connecting to the middle electrode and disposed underthe package body, wherein a part of the lens is contact with the upperelectrode.
 13. The light emitting device package according to claim 3,wherein the reflective structure is provided in the form of a dam or aring.
 14. The light emitting device package according to claim 5,wherein the reflective structure is disposed on the electrodes and underperiphery of the lens.
 15. The light emitting device package accordingto claim 9, wherein the reflective structure has a side surface havingan angle of inclination larger than 45° from a horizontal lint.
 16. Thelight emitting device package according to claim 11, wherein the packagebody is formed of a nitride or oxide.
 17. The light emitting devicepackage according to claim 11, wherein the package body is comprised atleast one of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃,or AlN.
 18. A light emitting device package comprising: a package body;at least one electrode on the package body; a light emitting device onthe package body; a reflective structure around the light emittingdevice on the package body; and a lens on the light emitting device,wherein the lens covers the reflective structure, wherein the angle ofinclination of the side surface of the reflective structure is rangefrom about 45° to about 90°, wherein the electrode comprises: a upperelectrode disposed on the package body; a lower electrode disposed underthe package body, wherein the reflective structure is disposed on a partof the upper electrode of the electrode wherein a part of the lens iscontact with the upper electrode.